LPM8205
Dual N -Channel Enhancement Power MOSFET
概述
The LPM9050 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 20V VGS(MAX) rating.This device is suitable for use as a uni-directional or bi-directional load switch.
应用
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Power Switch
◆ Load Switch
数据参数
数据参数
封装
SOT23-6
DS电压最大值(V)
30
GS电压最大值(V)
±20
DS漏电流(uA)
1
输出电流(A)
3.6
导通内阻(mΩ)
-
特征
特征
◆ 30V/3A, RDS(ON)=48mΩ(Typ.)@VGS=4.5V
◆ 30V/3.6A, RDS(ON)=36mΩ(Typ.)@VGS=10V
◆ Super high density cell design for extremely low RDS(ON)
◆ Small package SOT23-6
◆ 30V/3.6A, RDS(ON)=36mΩ(Typ.)@VGS=10V
◆ Super high density cell design for extremely low RDS(ON)
◆ Small package SOT23-6
