概述
The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc.
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
数据参数
数据参数
封装
SOP8
DS电压最大值(V)
20/-30
GS电压最大值(V)
±10
DS漏电流(uA)
1
输出电流(A)
6.5+4.5
导通内阻(mΩ)
100(P-MOS)
特征
特征
◆ Trench Technology
◆ NMOS:
VNDS=20V, IND=12A
RNDS(ON) RNDS(ON) ◆ PMOS:
VPDS=-20V, IPD=-4.5A
RPDS(ON) RPDS(ON) ◆ Super high density cell design
◆ Extremely Low Threshold Voltage
◆ Small package SOP-8
◆ NMOS:
VNDS=20V, IND=12A
RNDS(ON) RNDS(ON) ◆ PMOS:
VPDS=-20V, IPD=-4.5A
RPDS(ON) RPDS(ON) ◆ Super high density cell design
◆ Extremely Low Threshold Voltage
◆ Small package SOP-8
