LPM9022
Dual N -Channel Enhancement Power MOSFET
概述
The LPM8205 integrates two N-Channel Enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM8205 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc.
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
数据参数
数据参数
封装
SOT23-6/TSSOP8
DS电压最大值(V)
20
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
7.6
导通内阻(mΩ)
29
特征
特征
◆ 100% EAS Guaranteed
◆ Green Device Available
◆ Super Low Gate Charge
◆ Excellent CdV/dt effect decline
◆ Advanced high cell density Trenchtechnology
◆ Green Device Available
◆ Super Low Gate Charge
◆ Excellent CdV/dt effect decline
◆ Advanced high cell density Trenchtechnology
