LPM8205
Dual N -Channel Enhancement Power MOSFET
概述
The LPM9024 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9024 is Pb-free and Halogen-free.
应用
◆ Driver for Relay, Solenoid, Motor, LED etc.
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
◆ DC-DC converter circuit
◆ Power Switch
◆ Load Switch
◆ Charging
数据参数
数据参数
封装
DFN-6(2*2)
DS电压最大值(V)
20
GS电压最大值(V)
±10
DS漏电流(uA)
1
输出电流(A)
5
导通内阻(mΩ)
40
特征
特征
◆ Trench Technology
◆ Single NMOS: VDS=20V
RDS(ON) RDS(ON) ◆ Super high density cell design
◆ Extremely Low Threshold Voltage
◆ Small package DFN-6L 2*2mm
◆ Single NMOS: VDS=20V
RDS(ON) RDS(ON) ◆ Super high density cell design
◆ Extremely Low Threshold Voltage
◆ Small package DFN-6L 2*2mm
