LPM3407
LPM3407 -30V/-2.6A P-Channel Enhancement Mode Field Effect Transistor
概述
The LPM3401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
应用
◆ Portable Media Players/MP3 players
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
-30
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
4.2
导通内阻(mΩ)
85
特征
特征
◆ -15V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V
◆ -15V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
◆ -15V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
