概述
The LPM3406 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed.
应用
◆ Portable Media Players/MP3 players
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
30
GS电压最大值(V)
±20
DS漏电流(uA)
1
输出电流(A)
3.6
导通内阻(mΩ)
-
特征
特征
◆ 30V/3A, RDS(ON)=48mΩ(Typ.)@VGS=4.5V
◆ 30V/3.6A, RDS(ON)=36mΩ(Typ.)@VGS=10V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
◆ 30V/3.6A, RDS(ON)=36mΩ(Typ.)@VGS=10V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
