概述
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed.
应用
◆ Portable Media Players
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
◆ Cellular and Smart mobile phone
◆ LCD
◆ DSC Sensor
◆ Wireless Card
数据参数
数据参数
封装
SOT23
DS电压最大值(V)
20
GS电压最大值(V)
±12
DS漏电流(uA)
1
输出电流(A)
3.5
导通内阻(mΩ)
75
特征
特征
◆ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
◆ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
◆ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
◆ Super high density cell design for extremely low RDS(ON)
◆ SOT23 Package
